N-Channel MOSFET, 123 A, 80 V, 5-Pin DFN onsemi NVMFS6H818NWFT1G

RS Stock No.: 172-3349Brand: onsemiManufacturers Part No.: NVMFS6H818NWFT1G
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

123 A

Maximum Drain Source Voltage

80 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

3.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.1mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Height

1.05mm

Series

NVMFS6H818N

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

AED 5.40

Each (In a Pack of 10) (ex VAT)

AED 5.67

Each (In a Pack of 10) (inc VAT)

N-Channel MOSFET, 123 A, 80 V, 5-Pin DFN onsemi NVMFS6H818NWFT1G
Select packaging type

AED 5.40

Each (In a Pack of 10) (ex VAT)

AED 5.67

Each (In a Pack of 10) (inc VAT)

N-Channel MOSFET, 123 A, 80 V, 5-Pin DFN onsemi NVMFS6H818NWFT1G
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

123 A

Maximum Drain Source Voltage

80 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

3.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.1mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Height

1.05mm

Series

NVMFS6H818N

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101