Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
100 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Configuration
Single
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Height
5.33mm
Stock information temporarily unavailable.
Please check again later.
P.O.A.
Production pack (Tape)
100
P.O.A.
Production pack (Tape)
100
Buy in bulk
quantity | Unit price |
---|---|
100 - 225 | P.O.A. |
250 - 475 | P.O.A. |
500 - 975 | P.O.A. |
1000+ | P.O.A. |
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
100 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Configuration
Single
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Height
5.33mm