Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1.5 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-126
Mounting Type
Through Hole
Maximum Power Dissipation
12.5 W
Minimum DC Current Gain
63
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
8.3 x 3.45 x 11.2mm
Maximum Operating Temperature
+150 °C
Product details
Small Signal NPN Transistors, 60V to 100V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Stock information temporarily unavailable.
Please check again later.
AED 2.40
Each (In a Tube of 60) (ex VAT)
AED 2.52
Each (In a Tube of 60) (inc. VAT)
60
AED 2.40
Each (In a Tube of 60) (ex VAT)
AED 2.52
Each (In a Tube of 60) (inc. VAT)
60
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
60 - 60 | AED 2.40 | AED 144.00 |
120 - 240 | AED 2.25 | AED 135.00 |
300+ | AED 2.15 | AED 129.00 |
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1.5 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-126
Mounting Type
Through Hole
Maximum Power Dissipation
12.5 W
Minimum DC Current Gain
63
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
8.3 x 3.45 x 11.2mm
Maximum Operating Temperature
+150 °C
Product details
Small Signal NPN Transistors, 60V to 100V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.