Dual N-Channel MOSFET, 7.5 A, 20 V, 8-Pin SOIC onsemi FDS6911

RS Stock No.: 806-3661Brand: onsemiManufacturers Part No.: FDS6911
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

20 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.6 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Length

4.9mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Width

3.9mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Height

1.575mm

Product details

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Stock information temporarily unavailable.

AED 36.22

AED 7.245 Each (Supplied as a Tape) (ex VAT)

AED 38.03

AED 7.607 Each (Supplied as a Tape) (inc. VAT)

Dual N-Channel MOSFET, 7.5 A, 20 V, 8-Pin SOIC onsemi FDS6911
Select packaging type

AED 36.22

AED 7.245 Each (Supplied as a Tape) (ex VAT)

AED 38.03

AED 7.607 Each (Supplied as a Tape) (inc. VAT)

Dual N-Channel MOSFET, 7.5 A, 20 V, 8-Pin SOIC onsemi FDS6911
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Tape
5 - 5AED 7.245AED 36.22
10 - 95AED 7.035AED 35.18
100 - 245AED 6.825AED 34.12
250 - 495AED 6.668AED 33.34
500+AED 6.51AED 32.55

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No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

20 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.6 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Length

4.9mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Width

3.9mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Height

1.575mm

Product details

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more