onsemi PowerTrench Dual N-Channel MOSFET, 5.5 A, 30 V, 8-Pin SOIC FDS6930B
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Series
PowerTrench
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
38 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
2
Length
5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
2.7 nC @ 5 V
Width
4mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
5
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
5
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Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Series
PowerTrench
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
38 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
2
Length
5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
2.7 nC @ 5 V
Width
4mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products