Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
1300 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
348 W
Package Type
TO-3PN
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.8 x 5 x 20.1mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Product details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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AED 25.10
Each (In a Tube of 30) (ex VAT)
AED 26.355
Each (In a Tube of 30) (inc VAT)
30
AED 25.10
Each (In a Tube of 30) (ex VAT)
AED 26.355
Each (In a Tube of 30) (inc VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 30 | AED 25.10 | AED 753.00 |
60+ | AED 23.60 | AED 708.00 |
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
1300 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
348 W
Package Type
TO-3PN
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.8 x 5 x 20.1mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Product details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.