onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
64 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±25V
Package Type
TO-264
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
20 x 5 x 26mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
AED 1,022.44
AED 40.898 Each (In a Tube of 25) (ex VAT)
AED 1,073.56
AED 42.943 Each (In a Tube of 25) (inc. VAT)
25
AED 1,022.44
AED 40.898 Each (In a Tube of 25) (ex VAT)
AED 1,073.56
AED 42.943 Each (In a Tube of 25) (inc. VAT)
25
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 25 - 100 | AED 40.898 | AED 1,022.44 |
| 125 - 225 | AED 34.702 | AED 867.56 |
| 250+ | AED 30.608 | AED 765.19 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
64 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±25V
Package Type
TO-264
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
20 x 5 x 26mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products