Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
1.7 A
Maximum Drain Source Voltage
100 V
Series
QFET
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.7mm
Typical Gate Charge @ Vgs
5.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.7mm
Minimum Operating Temperature
-55 °C
Product details
QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor
Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
AED 60.90
AED 3.045 Each (In a Pack of 20) (ex VAT)
AED 63.94
AED 3.197 Each (In a Pack of 20) (inc. VAT)
Standard
20
AED 60.90
AED 3.045 Each (In a Pack of 20) (ex VAT)
AED 63.94
AED 3.197 Each (In a Pack of 20) (inc. VAT)
Standard
20
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 20 - 80 | AED 3.045 | AED 60.90 |
| 100 - 480 | AED 2.152 | AED 43.05 |
| 500 - 980 | AED 1.732 | AED 34.65 |
| 1000 - 3980 | AED 1.418 | AED 28.35 |
| 4000+ | AED 1.208 | AED 24.15 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
1.7 A
Maximum Drain Source Voltage
100 V
Series
QFET
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.7mm
Typical Gate Charge @ Vgs
5.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.7mm
Minimum Operating Temperature
-55 °C
Product details
QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor
Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.


