Technical Document
Specifications
Brand
onsemiProduct Type
Ignition IGBT
Maximum Continuous Collector Current Ic
21A
Maximum Collector Emitter Voltage Vceo
430V
Maximum Power Dissipation Pd
150W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±10 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.2V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Series
EcoSPARK
Energy Rating
300mJ
Automotive Standard
AEC-Q101
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Stock information temporarily unavailable.
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
5
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Stock information temporarily unavailable.
Production pack (Reel)
5
Technical Document
Specifications
Brand
onsemiProduct Type
Ignition IGBT
Maximum Continuous Collector Current Ic
21A
Maximum Collector Emitter Voltage Vceo
430V
Maximum Power Dissipation Pd
150W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±10 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.2V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Series
EcoSPARK
Energy Rating
300mJ
Automotive Standard
AEC-Q101
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.


