onsemi MJF6388G NPN Darlington Transistor, 10 A dc 100 V dc HFE:100, 3-Pin TO-220
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 A dc
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Height
16.12mm
Width
4.9mm
Maximum Power Dissipation
40 W
Minimum Operating Temperature
-65 °C
Dimensions
10.63 x 4.9 x 16.12mm
Maximum Operating Temperature
+150 °C
Length
10.63mm
Country of Origin
Korea, Republic Of
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P.O.A.
Each (Supplied in a Tube) (ex VAT)
Production pack (Tube)
10
P.O.A.
Each (Supplied in a Tube) (ex VAT)
Production pack (Tube)
10
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Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 A dc
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Height
16.12mm
Width
4.9mm
Maximum Power Dissipation
40 W
Minimum Operating Temperature
-65 °C
Dimensions
10.63 x 4.9 x 16.12mm
Maximum Operating Temperature
+150 °C
Length
10.63mm
Country of Origin
Korea, Republic Of
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products