Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 5mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
2.92 x 1.3 x 0.93mm
Width
1.3mm
Height
0.93mm
Minimum Operating Temperature
-55 °C
Length
2.92mm
Maximum Operating Temperature
+150 °C
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
AED 23.62
AED 0.945 Each (In a Pack of 25) (ex VAT)
AED 24.80
AED 0.992 Each (In a Pack of 25) (inc. VAT)
Standard
25
AED 23.62
AED 0.945 Each (In a Pack of 25) (ex VAT)
AED 24.80
AED 0.992 Each (In a Pack of 25) (inc. VAT)
Stock information temporarily unavailable.
Standard
25
Stock information temporarily unavailable.
Quantity | Unit price | Per Pack |
---|---|---|
25 - 75 | AED 0.945 | AED 23.62 |
100 - 225 | AED 0.84 | AED 21.00 |
250 - 475 | AED 0.682 | AED 17.06 |
500 - 975 | AED 0.63 | AED 15.75 |
1000+ | AED 0.578 | AED 14.44 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 5mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
2.92 x 1.3 x 0.93mm
Width
1.3mm
Height
0.93mm
Minimum Operating Temperature
-55 °C
Length
2.92mm
Maximum Operating Temperature
+150 °C
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.