Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
160 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
454 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Common Emitter
Dimensions
16.25 x 5.3 x 21.34mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
4912pF
Maximum Operating Temperature
+175 °C
Product details
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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AED 20.45
Each (In a Tube of 30) (ex VAT)
AED 21.472
Each (In a Tube of 30) (inc VAT)
30
AED 20.45
Each (In a Tube of 30) (ex VAT)
AED 21.472
Each (In a Tube of 30) (inc VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 120 | AED 20.45 | AED 613.50 |
150 - 270 | AED 17.75 | AED 532.50 |
300+ | AED 16.85 | AED 505.50 |
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
160 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
454 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Common Emitter
Dimensions
16.25 x 5.3 x 21.34mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
4912pF
Maximum Operating Temperature
+175 °C
Product details
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.