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onsemi N-Channel MOSFET, 71 A, 40 V, 4-Pin LFPAK, SOT-669 NTMYS5D3N04CTWG

RS Stock No.: 195-2521Brand: onsemiManufacturers Part No.: NTMYS5D3N04CTWG
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

71 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

5.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.25mm

Length

5mm

Typical Gate Charge @ Vgs

16 @ 10 V nC

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.15mm

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Stock information temporarily unavailable.

AED 144.38

AED 5.775 Each (In a Pack of 25) (ex VAT)

AED 151.60

AED 6.064 Each (In a Pack of 25) (inc. VAT)

onsemi N-Channel MOSFET, 71 A, 40 V, 4-Pin LFPAK, SOT-669 NTMYS5D3N04CTWG
Select packaging type

AED 144.38

AED 5.775 Each (In a Pack of 25) (ex VAT)

AED 151.60

AED 6.064 Each (In a Pack of 25) (inc. VAT)

onsemi N-Channel MOSFET, 71 A, 40 V, 4-Pin LFPAK, SOT-669 NTMYS5D3N04CTWG
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
25 - 75AED 5.775AED 144.38
100 - 225AED 4.988AED 124.69
250+AED 4.305AED 107.62

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

71 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

5.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.25mm

Length

5mm

Typical Gate Charge @ Vgs

16 @ 10 V nC

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.15mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more