Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
1.3mm
Length
2.9mm
Typical Gate Charge @ Vgs
6 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
AED 8.92
AED 0.892 Each (In a Pack of 10) (ex VAT)
AED 9.37
AED 0.937 Each (In a Pack of 10) (inc. VAT)
Standard
10
AED 8.92
AED 0.892 Each (In a Pack of 10) (ex VAT)
AED 9.37
AED 0.937 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | AED 0.892 | AED 8.92 |
| 100 - 240 | AED 0.788 | AED 7.88 |
| 250 - 490 | AED 0.682 | AED 6.82 |
| 500 - 990 | AED 0.63 | AED 6.30 |
| 1000+ | AED 0.578 | AED 5.78 |
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
1.3mm
Length
2.9mm
Typical Gate Charge @ Vgs
6 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Product details


