Renesas Electronics RJH1CF7RDPQ-80#T2 IGBT, 60 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.: 124-3699Brand: Renesas ElectronicsManufacturers Part No.: RJH1CF7RDPQ-80#T2
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Technical Document

Specifications

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

250 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.94 x 5.02 x 21.13mm

Gate Capacitance

3270pF

Maximum Operating Temperature

+150 °C

Product details

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Renesas Electronics RJH1CF7RDPQ-80#T2 IGBT, 60 A 1200 V, 3-Pin TO-247, Through Hole

P.O.A.

Renesas Electronics RJH1CF7RDPQ-80#T2 IGBT, 60 A 1200 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.

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Technical Document

Specifications

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

250 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.94 x 5.02 x 21.13mm

Gate Capacitance

3270pF

Maximum Operating Temperature

+150 °C

Product details

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more