Technical Document
Specifications
Brand
Renesas ElectronicsMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
250 W
Package Type
TO-247A
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.94 x 5.02 x 21.13mm
Gate Capacitance
1750pF
Maximum Operating Temperature
+175 °C
Country of Origin
China
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2
Technical Document
Specifications
Brand
Renesas ElectronicsMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
250 W
Package Type
TO-247A
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.94 x 5.02 x 21.13mm
Gate Capacitance
1750pF
Maximum Operating Temperature
+175 °C
Country of Origin
China