Renesas Electronics RJH65T47DPQ-A0#T0 IGBT, 90 A 650 V, 3-Pin TO-247A, Through Hole

RS Stock No.: 124-0910Brand: Renesas ElectronicsManufacturers Part No.: RJH65T47DPQ-A0#T0
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Technical Document

Specifications

Maximum Continuous Collector Current

90 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

375 W

Package Type

TO-247A

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.94 x 5.02 x 21.13mm

Gate Capacitance

3000pF

Maximum Operating Temperature

+175 °C

Country of Origin

China

Product details

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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AED 25.15

Each (In a Pack of 2) (ex VAT)

AED 26.408

Each (In a Pack of 2) (inc VAT)

Renesas Electronics RJH65T47DPQ-A0#T0 IGBT, 90 A 650 V, 3-Pin TO-247A, Through Hole
Select packaging type

AED 25.15

Each (In a Pack of 2) (ex VAT)

AED 26.408

Each (In a Pack of 2) (inc VAT)

Renesas Electronics RJH65T47DPQ-A0#T0 IGBT, 90 A 650 V, 3-Pin TO-247A, Through Hole
Stock information temporarily unavailable.
Select packaging type

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quantityUnit pricePer Pack
2 - 18AED 25.15AED 50.30
20 - 38AED 21.00AED 42.00
40 - 198AED 19.45AED 38.90
200 - 398AED 18.10AED 36.20
400+AED 16.60AED 33.20

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Technical Document

Specifications

Maximum Continuous Collector Current

90 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

375 W

Package Type

TO-247A

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.94 x 5.02 x 21.13mm

Gate Capacitance

3000pF

Maximum Operating Temperature

+175 °C

Country of Origin

China

Product details

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.