Renesas Electronics RJP4010AGE-01#P5 IGBT, 150 (Pulse) A 400 V, 8-Pin TSOJ, Surface Mount
Technical Document
Specifications
Brand
Renesas ElectronicsMaximum Continuous Collector Current
150 (Pulse) A
Maximum Collector Emitter Voltage
400 V
Maximum Gate Emitter Voltage
±6V
Maximum Power Dissipation
1.6 W
Package Type
TSOJ
Mounting Type
Surface Mount
Channel Type
N
Pin Count
8
Transistor Configuration
Single
Dimensions
3.1 x 2.5 x 1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
5100pF
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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AED 5.45
Each (In a Pack of 4) (ex VAT)
AED 5.722
Each (In a Pack of 4) (inc VAT)
4
AED 5.45
Each (In a Pack of 4) (ex VAT)
AED 5.722
Each (In a Pack of 4) (inc VAT)
4
Buy in bulk
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|---|---|---|
| 4 - 36 | AED 5.45 | AED 21.80 |
| 40 - 76 | AED 4.50 | AED 18.00 |
| 80 - 196 | AED 4.10 | AED 16.40 |
| 200 - 396 | AED 3.90 | AED 15.60 |
| 400+ | AED 3.85 | AED 15.40 |
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Technical Document
Specifications
Brand
Renesas ElectronicsMaximum Continuous Collector Current
150 (Pulse) A
Maximum Collector Emitter Voltage
400 V
Maximum Gate Emitter Voltage
±6V
Maximum Power Dissipation
1.6 W
Package Type
TSOJ
Mounting Type
Surface Mount
Channel Type
N
Pin Count
8
Transistor Configuration
Single
Dimensions
3.1 x 2.5 x 1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
5100pF
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products