SiC N-Channel MOSFET, 55 A, 1200 V, 3-Pin TO-247N ROHM SCT3040KLGC11

RS Stock No.: 148-6974Brand: ROHMManufacturers Part No.: SCT3040KLGC11
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247N

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

22 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

SiC

Length

16mm

Typical Gate Charge @ Vgs

107 nC @ 18 V

Height

21mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

AED 192.55

Each (ex VAT)

AED 202.18

Each (inc. VAT)

SiC N-Channel MOSFET, 55 A, 1200 V, 3-Pin TO-247N ROHM SCT3040KLGC11

1

Available in multiples of 1
1AED 192.55
2AED 385.10
3AED 577.65
4AED 770.20
5AED 845.25
6AED 1,014.30
7AED 1,183.35
8AED 1,352.40
9AED 1,521.45
10AED 1,646.50
11AED 1,811.15
12AED 1,975.80
13AED 2,140.45
14AED 2,305.10
15AED 2,469.75

AED 192.55

Each (ex VAT)

AED 202.18

Each (inc. VAT)

SiC N-Channel MOSFET, 55 A, 1200 V, 3-Pin TO-247N ROHM SCT3040KLGC11
Stock information temporarily unavailable.

1

Available in multiples of 1
1AED 192.55
2AED 385.10
3AED 577.65
4AED 770.20
5AED 845.25
6AED 1,014.30
7AED 1,183.35
8AED 1,352.40
9AED 1,521.45
10AED 1,646.50
11AED 1,811.15
12AED 1,975.80
13AED 2,140.45
14AED 2,305.10
15AED 2,469.75

Buy in bulk

quantityUnit price
1 - 4AED 192.55
5 - 9AED 169.05
10 - 24AED 164.65
25+AED 160.45

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247N

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

22 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

SiC

Length

16mm

Typical Gate Charge @ Vgs

107 nC @ 18 V

Height

21mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more