Technical Documents
Specifications
Brand
Semikron DanfossProduct Type
SiC Power Module
Maximum Continuous Drain Current Id
56A
Maximum Drain Source Voltage Vds
1.2kV
Series
SEMITOP
Mount Type
Screw
Maximum Drain Source Resistance Rds
76mΩ
Typical Gate Charge Qg @ Vgs
215nC
Minimum Operating Temperature
-40°C
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
4.1V
Maximum Operating Temperature
175°C
Length
31mm
Height
12mm
Standards/Approvals
UL, IEC 61340
Width
55mm
Country of Origin
Italy
Product Details
The Semikron SiC MOSFET RM chopper or booster features a 1200V planar design with a 32 A current rating and an ultra-low inductance design for optimal efficiency. It includes a 1200V SiC Schottky FWD and by-pass rectifier diodes, enabling extremely high switching frequency. UL recognized under file no. E63532.
Stock information temporarily unavailable.
AED 1,902.83
AED 1,902.83 Each (ex VAT)
AED 1,997.97
AED 1,997.97 Each (inc. VAT)
1
AED 1,902.83
AED 1,902.83 Each (ex VAT)
AED 1,997.97
AED 1,997.97 Each (inc. VAT)
Stock information temporarily unavailable.
1
Technical Documents
Specifications
Brand
Semikron DanfossProduct Type
SiC Power Module
Maximum Continuous Drain Current Id
56A
Maximum Drain Source Voltage Vds
1.2kV
Series
SEMITOP
Mount Type
Screw
Maximum Drain Source Resistance Rds
76mΩ
Typical Gate Charge Qg @ Vgs
215nC
Minimum Operating Temperature
-40°C
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
4.1V
Maximum Operating Temperature
175°C
Length
31mm
Height
12mm
Standards/Approvals
UL, IEC 61340
Width
55mm
Country of Origin
Italy
Product Details
The Semikron SiC MOSFET RM chopper or booster features a 1200V planar design with a 32 A current rating and an ultra-low inductance design for optimal efficiency. It includes a 1200V SiC Schottky FWD and by-pass rectifier diodes, enabling extremely high switching frequency. UL recognized under file no. E63532.