Semikron Danfoss SKM300GB12E4 Dual IGBT Module, 422 A 1200 V, 7-Pin SEMITRANS3, Screw Mount
Technical Document
Specifications
Brand
Semikron DanfossMaximum Continuous Collector Current
422 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Number of Transistors
2
Configuration
Dual
Package Type
SEMITRANS3
Mounting Type
Screw Mount
Channel Type
N
Pin Count
7
Switching Speed
12kHz
Transistor Configuration
Half Bridge
Dimensions
106.4 x 61.4 x 30.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Country of Origin
Slovakia
Product details
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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AED 1,086.75
AED 1,086.75 Each (ex VAT)
AED 1,141.09
AED 1,141.09 Each (inc. VAT)
1
AED 1,086.75
AED 1,086.75 Each (ex VAT)
AED 1,141.09
AED 1,141.09 Each (inc. VAT)
1
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price |
|---|---|
| 1 - 1 | AED 1,086.75 |
| 2 - 4 | AED 1,018.31 |
| 5+ | AED 949.81 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
Semikron DanfossMaximum Continuous Collector Current
422 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Number of Transistors
2
Configuration
Dual
Package Type
SEMITRANS3
Mounting Type
Screw Mount
Channel Type
N
Pin Count
7
Switching Speed
12kHz
Transistor Configuration
Half Bridge
Dimensions
106.4 x 61.4 x 30.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Country of Origin
Slovakia
Product details
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products