Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
80 W
Minimum DC Current Gain
8
Transistor Configuration
Single
Maximum Collector Base Voltage
800 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
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AED 5.00
Each (In a Tube of 75) (ex VAT)
AED 5.25
Each (In a Tube of 75) (inc VAT)
75
AED 5.00
Each (In a Tube of 75) (ex VAT)
AED 5.25
Each (In a Tube of 75) (inc VAT)
75
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
75 - 75 | AED 5.00 | AED 375.00 |
150 - 300 | AED 3.75 | AED 281.25 |
375+ | AED 3.40 | AED 255.00 |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
80 W
Minimum DC Current Gain
8
Transistor Configuration
Single
Maximum Collector Base Voltage
800 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.