Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
800 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
9 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
1600 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Length
10.4mm
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
AED 13.86
AED 13.86 Each (ex VAT)
AED 14.55
AED 14.55 Each (inc. VAT)
1
AED 13.86
AED 13.86 Each (ex VAT)
AED 14.55
AED 14.55 Each (inc. VAT)
1
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price |
---|---|
1 - 9 | AED 13.86 |
10 - 99 | AED 11.71 |
100 - 249 | AED 9.08 |
250 - 499 | AED 8.92 |
500+ | AED 7.82 |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
800 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
9 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
1600 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Length
10.4mm
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.