Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
450 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Collector Base Voltage
850 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
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AED 4.30
Each (In a Tube of 75) (ex VAT)
AED 4.515
Each (In a Tube of 75) (inc VAT)
75
AED 4.30
Each (In a Tube of 75) (ex VAT)
AED 4.515
Each (In a Tube of 75) (inc VAT)
75
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
75 - 75 | AED 4.30 | AED 322.50 |
150 - 900 | AED 3.10 | AED 232.50 |
975+ | AED 2.10 | AED 157.50 |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
450 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Collector Base Voltage
850 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.