Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N, Type P
Maximum Continuous Drain Current Id
9.7A
Maximum Drain Source Voltage Vds
650V
Package Type
QFN-9
Series
MASTERG
Mount Type
Surface
Pin Count
31
Maximum Drain Source Resistance Rds
220mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
2nC
Maximum Power Dissipation Pd
40mW
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
125°C
Length
9mm
Height
1mm
Standards/Approvals
RoHS, ECOPACK
Automotive Standard
No
Country of Origin
Thailand
Product Details
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
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Stock information temporarily unavailable.
AED 30.71
AED 30.71 Each (ex VAT)
AED 32.25
AED 32.25 Each (inc. VAT)
Standard
1
AED 30.71
AED 30.71 Each (ex VAT)
AED 32.25
AED 32.25 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
| Quantity | Unit price |
|---|---|
| 1 - 9 | AED 30.71 |
| 10 - 24 | AED 23.70 |
| 25 - 99 | AED 21.94 |
| 100+ | AED 20.33 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N, Type P
Maximum Continuous Drain Current Id
9.7A
Maximum Drain Source Voltage Vds
650V
Package Type
QFN-9
Series
MASTERG
Mount Type
Surface
Pin Count
31
Maximum Drain Source Resistance Rds
220mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
2nC
Maximum Power Dissipation Pd
40mW
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
125°C
Length
9mm
Height
1mm
Standards/Approvals
RoHS, ECOPACK
Automotive Standard
No
Country of Origin
Thailand
Product Details
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
