Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
PNP
Maximum DC Collector Current
-500 mA
Maximum Collector Emitter Voltage
-300 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
20.8 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
3 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.8 x 7.8 x 2.7mm
Maximum Operating Temperature
+150 °C
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
AED 110.25
AED 2.205 Each (In a Tube of 50) (ex VAT)
AED 115.76
AED 2.315 Each (In a Tube of 50) (inc. VAT)
50
AED 110.25
AED 2.205 Each (In a Tube of 50) (ex VAT)
AED 115.76
AED 2.315 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | AED 2.205 | AED 110.25 |
| 100 - 450 | AED 1.575 | AED 78.75 |
| 500 - 950 | AED 1.365 | AED 68.25 |
| 1000 - 1950 | AED 1.155 | AED 57.75 |
| 2000+ | AED 1.102 | AED 55.12 |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
PNP
Maximum DC Collector Current
-500 mA
Maximum Collector Emitter Voltage
-300 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
20.8 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
3 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.8 x 7.8 x 2.7mm
Maximum Operating Temperature
+150 °C
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


