STMicroelectronics N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-89 PD85004
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-0.5 V, +15 V
Width
2.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.6mm
Maximum Operating Temperature
+150 °C
Height
0.44mm
Typical Power Gain
17 dB
Product details
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
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Stock information temporarily unavailable.
AED 130.00
AED 26.001 Each (In a Pack of 5) (ex VAT)
AED 136.50
AED 27.301 Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 130.00
AED 26.001 Each (In a Pack of 5) (ex VAT)
AED 136.50
AED 27.301 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 5 | AED 26.001 | AED 130.00 |
| 10 - 95 | AED 21.988 | AED 109.94 |
| 100 - 495 | AED 17.602 | AED 88.01 |
| 500 - 995 | AED 15.676 | AED 78.38 |
| 1000+ | AED 13.322 | AED 66.61 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-0.5 V, +15 V
Width
2.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.6mm
Maximum Operating Temperature
+150 °C
Height
0.44mm
Typical Power Gain
17 dB
Product details
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products