STMicroelectronics Sct N channel-Channel Power MOSFET, 110 A, 900 V Enhancement, 3-Pin HIP-247-3 SCT012W90G3AG

RS Stock No.: 719-464Brand: STMicroelectronicsManufacturers Part No.: SCT012W90G3AG
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

900V

Package Type

HIP-247-3

Series

SCT

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

625W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

138nC

Forward Voltage Vf

2.8V

Maximum Operating Temperature

200°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Automotive Standard

AEC-Q101

Country of Origin

China

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Stock information temporarily unavailable.

AED 92.29

AED 92.29 Each (ex VAT)

AED 96.90

AED 96.90 Each (inc. VAT)

STMicroelectronics Sct N channel-Channel Power MOSFET, 110 A, 900 V Enhancement, 3-Pin HIP-247-3 SCT012W90G3AG

1

Available in multiples of 1
1AED 92.29
2AED 184.58
3AED 276.86
4AED 369.15
5AED 447.80
6AED 537.35
7AED 626.91
8AED 716.47
9AED 806.03
10AED 895.59
11AED 985.15
12AED 1,074.71
13AED 1,164.27
14AED 1,253.83
15AED 1,343.38

AED 92.29

AED 92.29 Each (ex VAT)

AED 96.90

AED 96.90 Each (inc. VAT)

STMicroelectronics Sct N channel-Channel Power MOSFET, 110 A, 900 V Enhancement, 3-Pin HIP-247-3 SCT012W90G3AG

Stock information temporarily unavailable.

1

Available in multiples of 1
1AED 92.29
2AED 184.58
3AED 276.86
4AED 369.15
5AED 447.80
6AED 537.35
7AED 626.91
8AED 716.47
9AED 806.03
10AED 895.59
11AED 985.15
12AED 1,074.71
13AED 1,164.27
14AED 1,253.83
15AED 1,343.38

QuantityUnit price
1 - 4AED 92.29
5+AED 89.56

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

900V

Package Type

HIP-247-3

Series

SCT

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

625W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

138nC

Forward Voltage Vf

2.8V

Maximum Operating Temperature

200°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Automotive Standard

AEC-Q101

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more