STMicroelectronics SCT SiC N-Channel MOSFET, 55 A, 650 V, 4-Pin HiP247-4 SCT018W65G3-4AG
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
650 V
Package Type
HiP247-4
Series
SCT
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Country of Origin
China
Stock information temporarily unavailable.
AED 147.89
AED 147.89 Each (ex VAT)
AED 155.28
AED 155.28 Each (inc. VAT)
STMicroelectronics SCT SiC N-Channel MOSFET, 55 A, 650 V, 4-Pin HiP247-4 SCT018W65G3-4AG
1
AED 147.89
AED 147.89 Each (ex VAT)
AED 155.28
AED 155.28 Each (inc. VAT)
STMicroelectronics SCT SiC N-Channel MOSFET, 55 A, 650 V, 4-Pin HiP247-4 SCT018W65G3-4AG
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price |
---|---|
1 - 4 | AED 147.89 |
5+ | AED 143.48 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
650 V
Package Type
HiP247-4
Series
SCT
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Country of Origin
China