STMicroelectronics SCT N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG

RS Stock No.: 719-468Brand: STMicroelectronicsManufacturers Part No.: SCT018W65G3AG
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Package Type

HIP-247-3

Series

SCT

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

398W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

76nC

Forward Voltage Vf

2.6V

Maximum Operating Temperature

200°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Automotive Standard

AEC-Q101

Country of Origin

China

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Stock information temporarily unavailable.

AED 74.04

AED 74.04 Each (ex VAT)

AED 77.74

AED 77.74 Each (inc. VAT)

STMicroelectronics SCT N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG

1

Available in multiples of 1
1AED 74.04
2AED 148.09
3AED 222.13
4AED 296.18
5AED 358.98
6AED 430.78
7AED 502.58
8AED 574.38
9AED 646.17
10AED 717.97
11AED 789.77
12AED 861.56
13AED 933.36
14AED 1,005.16
15AED 1,076.96

AED 74.04

AED 74.04 Each (ex VAT)

AED 77.74

AED 77.74 Each (inc. VAT)

STMicroelectronics SCT N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG

Stock information temporarily unavailable.

1

Available in multiples of 1
1AED 74.04
2AED 148.09
3AED 222.13
4AED 296.18
5AED 358.98
6AED 430.78
7AED 502.58
8AED 574.38
9AED 646.17
10AED 717.97
11AED 789.77
12AED 861.56
13AED 933.36
14AED 1,005.16
15AED 1,076.96

QuantityUnit price
1 - 4AED 74.04
5+AED 71.80

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Package Type

HIP-247-3

Series

SCT

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

398W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

76nC

Forward Voltage Vf

2.6V

Maximum Operating Temperature

200°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Automotive Standard

AEC-Q101

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more