Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N channel
Product Type
Power MOSFET
Maximum Continuous Drain Current Id
56A
Maximum Drain Source Voltage Vds
1200V
Series
SCT
Package Type
Hip-247-4
Mount Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance Rds
27mΩ
Channel Mode
Enhancement
Forward Voltage Vf
2.7V
Typical Gate Charge Qg @ Vgs
73nC
Maximum Power Dissipation Pd
388W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Width
5.1 mm
Length
15.9mm
Height
25.27mm
Country of Origin
China
Stock information temporarily unavailable.
AED 74.85
AED 74.85 Each (ex VAT)
AED 78.59
AED 78.59 Each (inc. VAT)
1
AED 74.85
AED 74.85 Each (ex VAT)
AED 78.59
AED 78.59 Each (inc. VAT)
Stock information temporarily unavailable.
1
| Quantity | Unit price |
|---|---|
| 1 - 4 | AED 74.85 |
| 5+ | AED 73.83 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N channel
Product Type
Power MOSFET
Maximum Continuous Drain Current Id
56A
Maximum Drain Source Voltage Vds
1200V
Series
SCT
Package Type
Hip-247-4
Mount Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance Rds
27mΩ
Channel Mode
Enhancement
Forward Voltage Vf
2.7V
Typical Gate Charge Qg @ Vgs
73nC
Maximum Power Dissipation Pd
388W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Width
5.1 mm
Length
15.9mm
Height
25.27mm
Country of Origin
China


