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STMicroelectronics SCT SiC N-Channel MOSFET, 60 A, 650 V, 4-Pin HiP247-4 SCT027W65G3-4AG

RS Stock No.: 215-228Brand: STMicroelectronicsManufacturers Part No.: SCT027W65G3-4AG
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

650 V

Series

SCT

Package Type

HiP247-4

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

China

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Stock information temporarily unavailable.

AED 2,590.88

AED 86.362 Each (In a Tube of 30) (ex VAT)

AED 2,720.42

AED 90.68 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics SCT SiC N-Channel MOSFET, 60 A, 650 V, 4-Pin HiP247-4 SCT027W65G3-4AG

AED 2,590.88

AED 86.362 Each (In a Tube of 30) (ex VAT)

AED 2,720.42

AED 90.68 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics SCT SiC N-Channel MOSFET, 60 A, 650 V, 4-Pin HiP247-4 SCT027W65G3-4AG
Stock information temporarily unavailable.

Stock information temporarily unavailable.

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Ideate. Create. Collaborate

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

650 V

Series

SCT

Package Type

HiP247-4

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more