SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCT10N120

RS Stock No.: 202-5475Brand: STMicroelectronicsManufacturers Part No.: SCT10N120
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

1200 V

Package Type

Hip247

Series

SCT

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.58 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Transistor Material

SiC

Number of Elements per Chip

1

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AED 36.25

Each (In a Tube of 30) (ex VAT)

AED 38.062

Each (In a Tube of 30) (inc VAT)

SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCT10N120

AED 36.25

Each (In a Tube of 30) (ex VAT)

AED 38.062

Each (In a Tube of 30) (inc VAT)

SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCT10N120
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

1200 V

Package Type

Hip247

Series

SCT

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.58 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Transistor Material

SiC

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more