STMicroelectronics SiC MOSFET SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H

RS Stock No.: 201-4415Brand: STMicroelectronicsManufacturers Part No.: SCT20N120H
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

1200 V

Series

SiC MOSFET

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.203 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

239V

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

AED 58,380.00

AED 58.38 Each (On a Reel of 1000) (ex VAT)

AED 61,299.00

AED 61.299 Each (On a Reel of 1000) (inc. VAT)

STMicroelectronics SiC MOSFET SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H

1000

Available in multiples of 1000
1000AED 58,380.00
2000AED 116,760.00
3000AED 175,140.00
4000AED 233,520.00
5000AED 291,900.00
6000AED 350,280.00
7000AED 408,660.00
8000AED 467,040.00
9000AED 525,420.00
10000AED 583,800.00
11000AED 642,180.00
12000AED 700,560.00
13000AED 758,940.00
14000AED 817,320.00
15000AED 875,700.00

AED 58,380.00

AED 58.38 Each (On a Reel of 1000) (ex VAT)

AED 61,299.00

AED 61.299 Each (On a Reel of 1000) (inc. VAT)

STMicroelectronics SiC MOSFET SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H

Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000AED 58,380.00
2000AED 116,760.00
3000AED 175,140.00
4000AED 233,520.00
5000AED 291,900.00
6000AED 350,280.00
7000AED 408,660.00
8000AED 467,040.00
9000AED 525,420.00
10000AED 583,800.00
11000AED 642,180.00
12000AED 700,560.00
13000AED 758,940.00
14000AED 817,320.00
15000AED 875,700.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

1200 V

Series

SiC MOSFET

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.203 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

239V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more