STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin H2PAK-2

RS Stock No.: 201-4415Brand: STMicroelectronicsManufacturers Part No.: SCT20N120H
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK-2

Series

SiC MOSFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

203mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

45nC

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

4.7 mm

Length

15.8mm

Height

10.4mm

Standards/Approvals

No

Automotive Standard

No

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Stock information temporarily unavailable.

AED 58,380.00

AED 58.38 Each (On a Reel of 1000) (ex VAT)

AED 61,299.00

AED 61.299 Each (On a Reel of 1000) (inc. VAT)

STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin H2PAK-2

1000

Available in multiples of 1000
1000AED 58,380.00
2000AED 116,760.00
3000AED 175,140.00
4000AED 233,520.00
5000AED 291,900.00
6000AED 350,280.00
7000AED 408,660.00
8000AED 467,040.00
9000AED 525,420.00
10000AED 583,800.00
11000AED 642,180.00
12000AED 700,560.00
13000AED 758,940.00
14000AED 817,320.00
15000AED 875,700.00

AED 58,380.00

AED 58.38 Each (On a Reel of 1000) (ex VAT)

AED 61,299.00

AED 61.299 Each (On a Reel of 1000) (inc. VAT)

STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin H2PAK-2

Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000AED 58,380.00
2000AED 116,760.00
3000AED 175,140.00
4000AED 233,520.00
5000AED 291,900.00
6000AED 350,280.00
7000AED 408,660.00
8000AED 467,040.00
9000AED 525,420.00
10000AED 583,800.00
11000AED 642,180.00
12000AED 700,560.00
13000AED 758,940.00
14000AED 817,320.00
15000AED 875,700.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK-2

Series

SiC MOSFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

203mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

45nC

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

4.7 mm

Length

15.8mm

Height

10.4mm

Standards/Approvals

No

Automotive Standard

No

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more