Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-7
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
0.065Ω
Channel Mode
Enhancement
Country of Origin
China
Product Details
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties ofwide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
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Stock information temporarily unavailable.
AED 281.20
AED 281.20 Each (ex VAT)
AED 295.26
AED 295.26 Each (inc. VAT)
Standard
1
AED 281.20
AED 281.20 Each (ex VAT)
AED 295.26
AED 295.26 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
| Quantity | Unit price |
|---|---|
| 1 - 49 | AED 281.20 |
| 50 - 99 | AED 247.76 |
| 100 - 249 | AED 222.67 |
| 250 - 499 | AED 217.00 |
| 500+ | AED 211.54 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-7
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
0.065Ω
Channel Mode
Enhancement
Country of Origin
China
Product Details
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties ofwide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
