SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 STMicroelectronics SCTW100N65G2AG

RS Stock No.: 202-5485Brand: STMicroelectronicsManufacturers Part No.: SCTW100N65G2AG
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

H²PAK-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.105 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

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AED 137.35

Each (In a Tube of 30) (ex VAT)

AED 144.218

Each (In a Tube of 30) (inc VAT)

SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 STMicroelectronics SCTW100N65G2AG

AED 137.35

Each (In a Tube of 30) (ex VAT)

AED 144.218

Each (In a Tube of 30) (inc VAT)

SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 STMicroelectronics SCTW100N65G2AG
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

H²PAK-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.105 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more