SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 STMicroelectronics SCTW35N65G2VAG

RS Stock No.: 202-5487Brand: STMicroelectronicsManufacturers Part No.: SCTW35N65G2VAG
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.055 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

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AED 65.55

Each (In a Tube of 30) (ex VAT)

AED 68.828

Each (In a Tube of 30) (inc VAT)

SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 STMicroelectronics SCTW35N65G2VAG

AED 65.55

Each (In a Tube of 30) (ex VAT)

AED 68.828

Each (In a Tube of 30) (inc VAT)

SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 STMicroelectronics SCTW35N65G2VAG
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.055 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more