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SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCTWA20N120

RS Stock No.: 202-5491Brand: STMicroelectronicsManufacturers Part No.: SCTWA20N120
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.189 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

SiC

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AED 1,863.00

AED 62.10 Each (In a Tube of 30) (ex VAT)

AED 1,956.15

AED 65.205 Each (In a Tube of 30) (inc. VAT)

SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCTWA20N120

AED 1,863.00

AED 62.10 Each (In a Tube of 30) (ex VAT)

AED 1,956.15

AED 65.205 Each (In a Tube of 30) (inc. VAT)

SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCTWA20N120
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.189 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more