SiC N-Channel MOSFET Module, 45 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCTWA30N120
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
1200 V
Series
SCT
Package Type
Hip247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.09 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
Transistor Material
SiC
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AED 106.10
Each (In a Tube of 30) (ex VAT)
AED 111.405
Each (In a Tube of 30) (inc VAT)
30
AED 106.10
Each (In a Tube of 30) (ex VAT)
AED 111.405
Each (In a Tube of 30) (inc VAT)
30
Buy in bulk
| quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 30 | AED 106.10 | AED 3,183.00 |
| 60+ | AED 100.80 | AED 3,024.00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
1200 V
Series
SCT
Package Type
Hip247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.09 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products