Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
650 V
Series
SCTWA35N65G2V
Package Type
Hip247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.072 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China
Stock information temporarily unavailable.
AED 1,987.65
AED 66.255 Each (In a Tube of 30) (ex VAT)
AED 2,087.03
AED 69.568 Each (In a Tube of 30) (inc. VAT)
30
AED 1,987.65
AED 66.255 Each (In a Tube of 30) (ex VAT)
AED 2,087.03
AED 69.568 Each (In a Tube of 30) (inc. VAT)
Stock information temporarily unavailable.
30
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
650 V
Series
SCTWA35N65G2V
Package Type
Hip247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.072 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China


