STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 4-Pin Hip-247

RS Stock No.: 213-3943Brand: STMicroelectronicsManufacturers Part No.: SCTWA90N65G2V-4
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

119A

Maximum Drain Source Voltage Vds

650V

Package Type

Hip-247

Series

SCTWA90N65G2V-4

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

656W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

157nC

Forward Voltage Vf

2.5V

Maximum Operating Temperature

200°C

Width

21.1 mm

Height

5.1mm

Length

15.9mm

Standards/Approvals

No

Automotive Standard

No

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Stock information temporarily unavailable.

AED 4,564.62

AED 152.154 Each (In a Tube of 30) (ex VAT)

AED 4,792.85

AED 159.762 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 4-Pin Hip-247

30

Available in multiples of 30
30AED 4,564.62
60AED 9,129.24
90AED 13,693.86
120AED 18,258.48
150AED 22,823.10
180AED 27,387.72
210AED 31,952.34
240AED 36,516.96
270AED 41,081.58
300AED 45,646.20
330AED 50,210.82
360AED 54,775.44
390AED 59,340.06
420AED 63,904.68
450AED 68,469.30

AED 4,564.62

AED 152.154 Each (In a Tube of 30) (ex VAT)

AED 4,792.85

AED 159.762 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 4-Pin Hip-247

Stock information temporarily unavailable.

30

Available in multiples of 30
30AED 4,564.62
60AED 9,129.24
90AED 13,693.86
120AED 18,258.48
150AED 22,823.10
180AED 27,387.72
210AED 31,952.34
240AED 36,516.96
270AED 41,081.58
300AED 45,646.20
330AED 50,210.82
360AED 54,775.44
390AED 59,340.06
420AED 63,904.68
450AED 68,469.30

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

119A

Maximum Drain Source Voltage Vds

650V

Package Type

Hip-247

Series

SCTWA90N65G2V-4

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

656W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

157nC

Forward Voltage Vf

2.5V

Maximum Operating Temperature

200°C

Width

21.1 mm

Height

5.1mm

Length

15.9mm

Standards/Approvals

No

Automotive Standard

No

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more