STMicroelectronics G-HEMT P-Channel Transistor, 29 A, 700 V Enhancement, 8-Pin PowerFLAT SGT080R70ILB

RS Stock No.: 719-632Brand: STMicroelectronicsManufacturers Part No.: SGT080R70ILB
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

Transistor

Channel Type

P-Channel

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

700V

Package Type

PowerFLAT

Series

G-HEMT

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6.2nC

Maximum Power Dissipation Pd

188W

Maximum Gate Source Voltage Vgs

-6 to 7 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

8.1 mm

Length

8.1mm

Height

0.9mm

Country of Origin

China

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Stock information temporarily unavailable.

AED 19.90

AED 19.90 Each (ex VAT)

AED 20.90

AED 20.90 Each (inc. VAT)

STMicroelectronics G-HEMT P-Channel Transistor, 29 A, 700 V Enhancement, 8-Pin PowerFLAT SGT080R70ILB

1

Available in multiples of 1
1AED 19.90
2AED 39.80
3AED 59.71
4AED 79.61
5AED 99.51
6AED 119.41
7AED 139.31
8AED 159.22
9AED 179.12
10AED 199.02
11AED 218.92
12AED 238.82
13AED 258.73
14AED 278.63
15AED 298.53

AED 19.90

AED 19.90 Each (ex VAT)

AED 20.90

AED 20.90 Each (inc. VAT)

STMicroelectronics G-HEMT P-Channel Transistor, 29 A, 700 V Enhancement, 8-Pin PowerFLAT SGT080R70ILB

Stock information temporarily unavailable.

1

Available in multiples of 1
1AED 19.90
2AED 39.80
3AED 59.71
4AED 79.61
5AED 99.51
6AED 119.41
7AED 139.31
8AED 159.22
9AED 179.12
10AED 199.02
11AED 218.92
12AED 238.82
13AED 258.73
14AED 278.63
15AED 298.53

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

Transistor

Channel Type

P-Channel

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

700V

Package Type

PowerFLAT

Series

G-HEMT

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6.2nC

Maximum Power Dissipation Pd

188W

Maximum Gate Source Voltage Vgs

-6 to 7 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

8.1 mm

Length

8.1mm

Height

0.9mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more