STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

RS Stock No.: 719-637Brand: STMicroelectronicsManufacturers Part No.: SGT350R70GTK
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

P-Channel

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-252

Series

G-HEMT

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

350mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.5nC

Maximum Power Dissipation Pd

47W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.2mm

Height

2.4mm

Country of Origin

China

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Stock information temporarily unavailable.

AED 10,566.25

AED 4.226 Each (On a Reel of 2500) (ex VAT)

AED 11,094.56

AED 4.437 Each (On a Reel of 2500) (inc. VAT)

STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

2500

Available in multiples of 2500
2500AED 10,566.25
5000AED 21,132.50
7500AED 31,698.75
10000AED 42,265.00
12500AED 52,831.25
15000AED 63,397.50
17500AED 73,963.75
20000AED 84,530.00
22500AED 95,096.25
25000AED 105,662.50
27500AED 116,228.75
30000AED 126,795.00
32500AED 137,361.25
35000AED 147,927.50
37500AED 158,493.75

AED 10,566.25

AED 4.226 Each (On a Reel of 2500) (ex VAT)

AED 11,094.56

AED 4.437 Each (On a Reel of 2500) (inc. VAT)

STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

Stock information temporarily unavailable.

2500

Available in multiples of 2500
2500AED 10,566.25
5000AED 21,132.50
7500AED 31,698.75
10000AED 42,265.00
12500AED 52,831.25
15000AED 63,397.50
17500AED 73,963.75
20000AED 84,530.00
22500AED 95,096.25
25000AED 105,662.50
27500AED 116,228.75
30000AED 126,795.00
32500AED 137,361.25
35000AED 147,927.50
37500AED 158,493.75

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

P-Channel

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-252

Series

G-HEMT

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

350mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.5nC

Maximum Power Dissipation Pd

47W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.2mm

Height

2.4mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more