STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

RS Stock No.: 719-638Brand: STMicroelectronicsManufacturers Part No.: SGT350R70GTK
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Technical Document

Specifications

Channel Type

P-Channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

700V

Series

G-HEMT

Package Type

TO-252

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

350mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

1.5nC

Maximum Power Dissipation Pd

47W

Maximum Operating Temperature

150°C

Length

6.2mm

Height

2.4mm

Country of Origin

China

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AED 4.23

AED 4.23 Each (ex VAT)

AED 4.44

AED 4.44 Each (inc. VAT)

STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

AED 4.23

AED 4.23 Each (ex VAT)

AED 4.44

AED 4.44 Each (inc. VAT)

STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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Technical Document

Specifications

Channel Type

P-Channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

700V

Series

G-HEMT

Package Type

TO-252

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

350mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

1.5nC

Maximum Power Dissipation Pd

47W

Maximum Operating Temperature

150°C

Length

6.2mm

Height

2.4mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more