Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
9.35mm
Length
10.4mm
Typical Gate Charge @ Vgs
12.6 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Height
4.6mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China
Product details
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
AED 4,882.50
AED 4.882 Each (On a Reel of 1000) (ex VAT)
AED 5,126.62
AED 5.126 Each (On a Reel of 1000) (inc. VAT)
1000
AED 4,882.50
AED 4.882 Each (On a Reel of 1000) (ex VAT)
AED 5,126.62
AED 5.126 Each (On a Reel of 1000) (inc. VAT)
1000
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Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
9.35mm
Length
10.4mm
Typical Gate Charge @ Vgs
12.6 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Height
4.6mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China
Product details
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.