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STMicroelectronics STripFET F7 N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK STB100N6F7

RS Stock No.: 165-8231Brand: STMicroelectronicsManufacturers Part No.: STB100N6F7
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Series

STripFET F7

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.6 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

9.35mm

Length

10.4mm

Typical Gate Charge @ Vgs

12.6 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Height

4.6mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

Product details

N-Channel STripFET™ F7 Series, STMicroelectronics

The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

AED 4,882.50

AED 4.882 Each (On a Reel of 1000) (ex VAT)

AED 5,126.62

AED 5.126 Each (On a Reel of 1000) (inc. VAT)

STMicroelectronics STripFET F7 N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK STB100N6F7

AED 4,882.50

AED 4.882 Each (On a Reel of 1000) (ex VAT)

AED 5,126.62

AED 5.126 Each (On a Reel of 1000) (inc. VAT)

STMicroelectronics STripFET F7 N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK STB100N6F7
Stock information temporarily unavailable.

Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Series

STripFET F7

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.6 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

9.35mm

Length

10.4mm

Typical Gate Charge @ Vgs

12.6 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Height

4.6mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

Product details

N-Channel STripFET™ F7 Series, STMicroelectronics

The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more