Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Series
MDmesh DM2
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
290mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
20nC
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
9.35mm
Standards/Approvals
No
Height
4.6mm
Automotive Standard
No
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
AED 78.64
AED 15.729 Each (In a Pack of 5) (ex VAT)
AED 82.57
AED 16.515 Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 78.64
AED 15.729 Each (In a Pack of 5) (ex VAT)
AED 82.57
AED 16.515 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 5 | AED 15.729 | AED 78.64 |
| 10 - 95 | AED 13.856 | AED 69.28 |
| 100 - 495 | AED 11.449 | AED 57.24 |
| 500+ | AED 10.058 | AED 50.29 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Series
MDmesh DM2
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
290mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
20nC
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
9.35mm
Standards/Approvals
No
Height
4.6mm
Automotive Standard
No
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified


