Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-263
Series
MDmesh DM2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
290mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
20nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Length
9.35mm
Standards/Approvals
No
Height
4.6mm
Automotive Standard
No
Country of Origin
China
Product details
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
Stock information temporarily unavailable.
AED 8,988.00
AED 8.988 Each (On a Reel of 1000) (ex VAT)
AED 9,437.40
AED 9.437 Each (On a Reel of 1000) (inc. VAT)
1000
AED 8,988.00
AED 8.988 Each (On a Reel of 1000) (ex VAT)
AED 9,437.40
AED 9.437 Each (On a Reel of 1000) (inc. VAT)
Stock information temporarily unavailable.
1000
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-263
Series
MDmesh DM2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
290mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
20nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Length
9.35mm
Standards/Approvals
No
Height
4.6mm
Automotive Standard
No
Country of Origin
China
Product details
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified