N-Channel MOSFET, 20 A, 600 V, 3-Pin D2PAK STMicroelectronics STB26NM60N

RS Stock No.: 760-9503Brand: STMicroelectronicsManufacturers Part No.: STB26NM60N
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

60 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.75mm

Width

10.4mm

Transistor Material

Si

Series

MDmesh

Height

4.6mm

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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AED 5.90

Each (ex VAT)

AED 6.20

Each (inc VAT)

N-Channel MOSFET, 20 A, 600 V, 3-Pin D2PAK STMicroelectronics STB26NM60N
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 5.90
2AED 11.80
3AED 17.70
4AED 23.60
5AED 29.50
6AED 35.40
7AED 41.30
8AED 47.20
9AED 53.10
10AED 59.00
11AED 64.90
12AED 70.80
13AED 76.70
14AED 82.60
15AED 88.50

AED 5.90

Each (ex VAT)

AED 6.20

Each (inc VAT)

N-Channel MOSFET, 20 A, 600 V, 3-Pin D2PAK STMicroelectronics STB26NM60N
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 5.90
2AED 11.80
3AED 17.70
4AED 23.60
5AED 29.50
6AED 35.40
7AED 41.30
8AED 47.20
9AED 53.10
10AED 59.00
11AED 64.90
12AED 70.80
13AED 76.70
14AED 82.60
15AED 88.50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

60 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.75mm

Width

10.4mm

Transistor Material

Si

Series

MDmesh

Height

4.6mm

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more