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SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin D2PAK STMicroelectronics STB33N60DM6

RS Stock No.: 202-5495Brand: STMicroelectronicsManufacturers Part No.: STB33N60DM6
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

ST

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.115 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Number of Elements per Chip

1

Transistor Material

SiC

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AED 16.25

Each (On a Reel of 1000) (ex VAT)

AED 17.062

Each (On a Reel of 1000) (inc. VAT)

SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin D2PAK STMicroelectronics STB33N60DM6

AED 16.25

Each (On a Reel of 1000) (ex VAT)

AED 17.062

Each (On a Reel of 1000) (inc. VAT)

SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin D2PAK STMicroelectronics STB33N60DM6
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

ST

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.115 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more